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Transistors
2SB1463G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC2440G
■ Features
• High collector-emitter voltage (Base open) V
• Low noise voltage NV
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
CEO
= 25°C
a
Symbol
Rating
−150
V
CBO
−150
V
CEO
−5
V
EBO
−50
I
C
−100
I
CP
P
125
C
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
CEO
C
V
I
EBO
E
I
V
CBO
CB
*
h
V
FE
CE
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
NV
V
CE
R
g
R
S
130 to 220
185 to 330
Unit
V
V
V
mA
mA
mW
°C
°C
Conditions
= −100 µA, I
= 0
B
= −10 µA, I
= 0
C
= −100 V, I
= 0
E
= −5 V, I
= −10 mA
C
= −30 mA, I
= −3 mA
B
= −10 V, I
= 10 mA, f = 200 MHz
E
= −10 V, I
= 0, f = 1 MHz
E
= −10 V, I
= −1 mA, G
= 80 dB
C
V
= 100 kΩ, Function = FLAT
SJC00388AED
■ Package
• Code
SSMini3-F3
• Marking Symbol: I
• Pin Name
1. Base
2. Emitter
3. Collector
Min
Typ
Max
−150
−5
−1
130
330
−1
200
4
150
Unit
V
V
µA
V
MHz
pF
mV
1
Related Manuals for Panasonic 2SB1463G
Summary of Contents for Panasonic 2SB1463G
- Page 1 This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G ■ Features • High collector-emitter voltage (Base open) V • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
- Page 2 This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1463G T ( °C ) Ambient temperature T I CE(sat) −1 = 10 = 85°C − 0.1 −25°C 25°C − 0.01 − 0.1 −1 −10 −100 Collector current I (mA) ...
- Page 3 This product complies with the RoHS Directive (EU 2002/95/EC). SSMini3-F3 +0.05 1.60 − 0.03 +0.05 0.26 − 0.02 (0.50) (0.50) 1.00 ±0.05 (5°) Unit: mm +0.05 0.13 − 0.02...
- Page 4 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.