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TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π−MOSVI/U−MOSII)
Lithium-Ion Secondary Battery Applications
Notebook PCs
Portable Equipment Applications
Low drain−source ON resistance : P Channel R
High forward transfer admittance : P Channel |Y
Low leakage current : P Channel I
N Channel I
Enhancement−mode
: P Channel V
= −0.8~ −2.0 V (V
th
N Channel V
= 0.8~2.0 V (V
th
Absolute Maximum Ratings
Characteristics
Drain-source voltage
= 20 kΩ)
Drain-gate voltage (R
GS
Gate-source voltage
DC
Drain current
Pulse
Single-device operation
Drain power
dissipation
(t = 10s)
Single-device value at
(Note 2a)
dual operation (Note 3b)
Single-device operation
Drain power
dissipation
(t = 10s)
Single-device value at
(Note 2b)
dual operation (Note 3b)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
Note: For Notes 1 to 5, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
TPC8402
DS (ON)
N Channel R
DS (ON)
| = 7 S (typ.)
fs
N Channel |Y
| = 6 S (typ.)
fs
= −10 µA (V
DSS
DS
= 10 µA (V
DSS
DS
= −10 V, I
= −1mA)
DS
D
= 10 V, I
= 1mA)
DS
D
(Ta = 25°C)
Rating
Symbol
P Channel N Channel
V
−30
DSS
V
−30
DGR
V
±20
GSS
(Note 1)
I
−4.5
D
(Note 1)
I
−18
DP
P
1.5
D (1)
(Note 3a)
P
1.0
D (2)
P
0.75
D (1)
(Note 3a)
P
0.45
D (2)
26.3
E
AS
(Note 4a)
I
−4.5
AR
E
0.10
AR
T
150
ch
T
−55~150
stg
= 27 mΩ (typ.)
= 37 mΩ (typ.)
= −30 V)
= 30 V)
Unit
30
V
30
V
JEDEC
±20
V
JEITA
5
A
TOSHIBA
20
Weight: 0.080 g (typ.)
1.5
1.0
Circuit Configuration
W
0.75
0.45
32.5
mJ
(Note 4b)
5
A
mJ
°C
°C
1
TPC8402
Unit: mm
―
―
2-6J1E
2006-11-13
Related Manuals for Toshiba TPC8402
Summary of Contents for Toshiba TPC8402
- Page 1 (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
-
Page 2: Thermal Characteristics
TPC8402 Thermal Characteristics Characteristics Symbol Max. Unit Single-device operation 83.3 th (ch-a) (1) (Note 3a) Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation th (ch-a) (2) (Note 3b) °C/W Single-device operation th (ch-a) (1) -
Page 3: Electrical Characteristics
TPC8402 P-ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Gate leakage current = ±16 V, V = 0 V — — ±10 µA Drain cut−off current = −30 V, V = 0 V —... - Page 4 TPC8402 N-ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Gate leakage current = ±16 V, V = 0 V — — ±10 µA Drain cut−off current = 30 V, V = 0 V ―...
- Page 5 TPC8402 P-ch – I DS (ON) V GS = −4 V V GS = −10 V Common source Ta = 25°C Pulse test −0.1 −0.3 −1 −3 −10 −30 −100 Drain current I 2006-11-13...
- Page 6 TPC8402 P-ch – Ta DS (ON) Common source Pulse test I D = −4.5 A −2.2 A −1.3 A I D = −4.5 A, −2.2 A V GS = −4 V −1.3 A −10 V −80 −40 Ambient temperature Ta ( °...
-
Page 7: Single Pulse
TPC8402 P-ch − t 1000 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) - Page 8 TPC8402 N-ch 2006-11-13...
- Page 9 TPC8402 N-ch – Ta DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a)
- Page 10 TPC8402 N-ch − t 1000 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a)
- Page 11 • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.