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Transistors
2SA1748
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4562
■ Features
• High transition frequency f
• Small collector output capacitance C
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
T
ob
= 25°C
a
Symbol
Rating
−50
V
CBO
−50
V
CEO
−5
V
EBO
−50
I
C
P
150
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
CBO
C
V
I
CEO
C
V
I
EBO
E
I
V
CBO
CB
I
V
CEO
CE
*
h
V
FE
CE
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
Q
R
200 to 400
250 to 500
Unit
V
V
V
mA
Marking Symbol: AL
mW
°C
°C
Conditions
= −10 µA, I
= 0
E
= −1 mA, I
= 0
B
= −10 µA, I
= 0
C
= −10 V, I
= 0
E
= −10 V, I
= 0
B
= −10 V, I
= −2 mA
C
= −10 mA, I
= −1 mA
B
= −10 V, I
= 2 mA, f = 200 MHz
E
= −10 V, I
= 0, f = 1 MHz
E
SJC00028BED
+0.1
0.3
–0.0
3
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
10˚
SMini3-G1 Package
Min
Typ
Max
−50
−50
−5
− 0.1
−100
200
500
− 0.1
− 0.3
250
1.5
Unit: mm
+0.10
0.15
–0.05
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
Unit
V
V
V
µA
µA
V
MHz
pF
1
Related Manuals for Panasonic 2SA1748
Summary of Contents for Panasonic 2SA1748
- Page 1 Transistors 2SA1748 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4562 ■ Features • High transition frequency f • Small collector output capacitance C • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
- Page 2 2SA1748 T ( °C ) Ambient temperature T I CE(sat) −100 = 10 −10 −1 = 75°C 25°C − 0.1 −25°C − 0.01 −1 −10 −100 −1 000 ( mA ) Collector current I V f = 1 MHz = 25°C...
- Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.