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Transistors
2SA1739
Silicon PNP epitaxial planar type
For high speed switching
Complementary to 2SC3938
■ Features
• High speed switching
• Low collector-emitter saturation voltage V
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol
Rating
−15
V
CBO
−15
V
CEO
−4
V
EBO
−50
I
C
−100
I
CP
P
150
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
I
V
CBO
CB
I
V
EBO
CE
*
h
V
FE1
CE
h
V
FE2
CE
= −10 mA, I
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
t
Refer to the switching time
on
t
measurement circuit
off
t
stg
Q
R
50 to 120
90 to 150
AXQ
AXR
10˚
Unit
V
V
V
mA
mA
Marking Symbol: AX
mW
°C
°C
Conditions
= −8 V, I
= 0
E
= −3 V, I
= 0
C
= −1 V, I
= −10 mA
C
= −1 V, I
= −1 mA
C
= −1 mA
B
= −10 V, I
= 10 mA, f = 200 MHz
E
= −5 V, I
= 0, f = 1 MHz
E
No-rank
50 to 150
AX
SJC00027BED
+0.1
0.3
–0.0
3
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
SMini3-G1 Package
Min
Typ
Max
− 0.1
− 0.1
50
150
30
− 0.1
− 0.2
800
1 500
1
12
20
19
Unit: mm
+0.10
0.15
–0.05
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
Unit
µA
µA
V
MHz
pF
ns
ns
ns
1
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Summary of Contents for Panasonic 2SA1739
- Page 1 Transistors 2SA1739 Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938 ■ Features • High speed switching • Low collector-emitter saturation voltage V • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■...
- Page 2 2SA1739 Switching time measurement circuit Test circuit = −1.5 V 62 Ω 2 kΩ 0.1 µF 52 Ω 51 Ω = −5.8 V = 9.8 V = Ground = −8.0 V V −60 = 25°C = −600 µA −50 −500 µA...
- Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.