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Transistors
2SA1018
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1473
■ Features
• High collector-emitter voltage (Base open) V
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: January 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CEO
= 25°C
a
Symbol
Rating
−250
V
CBO
−200
V
CEO
−5
V
EBO
−70
I
C
−100
I
CP
P
750
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= −100 µA, I
V
I
CEO
C
= −1 µA, I
V
I
EBO
E
I
V
CEO
CE
*
h
V
FE
CE
= −50 mA, I
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
Q
R
60 to 150
100 to 220
Unit
V
0.45
V
V
mA
mA
mW
°C
°C
Conditions
= 0
B
= 0
C
= −120 V, I
= 0
B
= −10 V, I
= −5 mA
C
= −5 mA
B
= −10 V, I
= 10 mA, f = 200 MHz
E
= −10 V, I
=0, f = 1 MHz
E
SJC00008BED
5.0
±0.2
0.7
±0.1
+0.15
+0.15
0.45
–0.1
–0.1
+0.6
+0.6
2.5
2.5
–0.2
–0.2
1
2 3
TO-92-B1 Package
Min
Typ
Max
−200
−5
−1
60
220
−1.5
50
10
Unit: mm
4.0
±0.2
1 : Emitter
2 : Collector
3 : Base
Unit
V
V
µA
V
MHz
pF
1
Related Manuals for Panasonic 2SA1018
Summary of Contents for Panasonic 2SA1018
- Page 1 Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 ■ Features • High collector-emitter voltage (Base open) V ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
- Page 2 2SA1018 T 1 000 ( °C ) Ambient temperature T I CE(sat) −100 = 10 −10 −1 = 75°C 25°C − 0.1 −25°C − 0.01 − 0.1 −1 −10 −100 ( mA ) Collector current I V f = 1 MHz = 25°C...
- Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.